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[期刊论文] 作者:LI Ming-Kai,LI Cheng-Bin,LIU Chuan-Sheng,FAN Xiang-Jun,FU De-Jun,SHON Yun,KANG Tae-Won,
来源:中国物理快报(英文版) 年份:2004
The Ⅲ-Ⅴ wide band gap semiconductors show the potential in applications for dilute magnetic semiconductors.AlN films are implanted with 20-keV Mn+ ions with a...
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