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A self-aligned process to fill up electrode gap based on the wet etching properties of Ge2Sb2Te5 for
[会议论文] 作者：Yaling Zhou,Yingchun Fu,Lina Wan,Xiaofeng Wang,Xiaodong Wang,
来源：The 6th International Conference on Nanoscience and Technolo 年份：2015
Ge2Sb2Te5(GST)phase change material is widely used in the study of Phase change random access memory(PRAM).Researches show if phase change material is confined to the electrode gap,the heating efficie...
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