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[期刊论文] 作者：Shi He,Mou Yang,Rui-Qiang Wan,
来源：中国物理B（英文版） 年份：2018
Strain is a powerful tool to engineer the band structure of bilayer phosphorene. The band gap can be decreased by vertical tensile strain or in-plane compressiv...
Enhanced treatment of water with low turbidity:Combined effects of permanganate, PAM and recycled sl
[期刊论文] 作者：SUN Li-hua,LV Mou,YANG Yan-lin,
来源：城市道桥与防洪 年份：2009
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
ALUMINUM AND YTTRIUM COMPLEXES SUPPORTED BY ASYMMETRICAL SCHIFF BASE LIGAND: SYNTHESIS, STRUCTURE, A
[会议论文] 作者：Zehuai Mou,Yang Wang,Wei Zhao,
来源：第五届高分子化学国际学术研讨会 年份：2012
...
ALUMINUM AND YTTRIUM COMPLEXES SUPPORTED BY ASYMMETRICAL SCHIFF BASE LIGAND SYNTHESIS, STRUCTURE, AN
[会议论文] 作者：Zehuai Mou,Yang Wang,Wei Zhao,
来源：第五届高分子化学国际学术研讨会 年份：2012
...
Surface acceptor-like trap model for gate leakage current degradation in lattice-matched InAlN/GaN H
[会议论文] 作者：Dawei Yan,Jian Ren,Wenjie Mou,Yang Zhai,Xiaofeng Gu,
来源：第一届全国宽禁带半导体学术及应用技术会议 年份：2015
...
Surface acceptor-like trap model for gate leakage current degradation in lattice-matched InAlN/GaN H
[会议论文] 作者：Dawei Yan,Jian Ren,Wenjie Mou,Yang Zhai,Xiaofeng Gu,
来源：第一届全国宽禁带半导体学术及应用技术会议 年份：2015
Due to the excellent physical properties,such as high breakdown field,high electron saturation velocity,and good thermal stability,GaN-based high electron mobility transistors (HEMTs) have emerged as...
[期刊论文] 作者：Rui-Qiang Wang,Li Sheng,Liang-Bin Hu,Mou Yang,Baigeng Wang,D.Y.Xing,
来源：黑龙江科技信息 年份：2014
本文通过对荣华二采区10...
Dynamic conductivity modified by impurity resonant states in doping three-dimensional Dirac semimeta
[期刊论文] 作者：Shuai Li,Chen Wang,Shi-Han Zheng,Rui-Qiang Wang,Jun Li,Mou Yang,
来源：黑龙江科技信息 年份：2018
本文通过对荣华二采区10...
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