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Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a
[期刊论文] 作者：Subhra Chowdhury,Swarnabha Chattaraj,Dhrubes Biswas,,
来源：Journal of Semiconductors 年份：2015
For the first time,we have introduced a novel GaN based resonant tunneling high electron mobility transistor(RTHEMT) on a silicon substrate.A monolithically int...
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