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[期刊论文] 作者：Wang Chuan-Dao,Yang Fu-Hua,Feng Song-Lin,
来源：中国物理B(英文版) 年份：2008
In the framework of the effective mass theory, this paper calculates the electron energy levels of an InAs/GaAs tyre-shape quantum ring (TSQR) by using the plan...
[期刊论文] 作者：GONG Jian,YANG Fu-Hua,FENG Song-Lin,
来源：中国物理快报(英文版) 年份：2007
Coherent tunnelling is studied in the framework of the effective mass approximation for an asymmetric coupled quantum well. The Hartree potential due to the ele...
[期刊论文] 作者：DU Yan-Dong,HAN Wei-Hua,YAN Wei,YANG Fu-Hua,
来源：中国物理快报（英文版） 年份：2014
We investigate the impact of CHF3 plasma treatment on the performance of AlGaN/GaN HEMT (F-HEMT) by a temperature-dependent measurement in the thermal range fro...
,A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and h
[期刊论文] 作者：Ma Long,Huang Ying-Long,Zhang Yang,Yang Fu-Hua,Wang Liang-Chen,
来源：中国物理（英文版） 年份：2006
This paper reports that the structures of A1GaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially g...
,Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistor
[期刊论文] 作者：Wang Hao,Han Wei-Hua,Ma Liu-Hong,Li Xiao-Ming,Yang Fu-Hua,
来源：中国物理B（英文版） 年份：2014
...
[期刊论文] 作者：Ma Liu-Hong,Han Wei-Hua,Wang Hao,Yang Xiang,Yang Fu-Hua,
来源：中国物理B（英文版） 年份：2015
...
[期刊论文] 作者：Zhao Hui,Luo Wei,Zheng Hai-Yang,Yang Jin-Ling,Yang Fu-Hua,
来源：中国物理B（英文版） 年份：2012
...
[期刊论文] 作者：WANG Hai-Long,FENG Song-Lin,YANG Fu-Hua,SUN Bao-Quan,JIANG De-Sheng,
来源：中国物理快报(英文版) 年份：2000
The excitation transfer processes in vertically self-organized pairs of unequal-sized quantum dots (QDs), which are created in InAs/GaAs bilayers with different...
[期刊论文] 作者：HUANG Ying-Long,MA Long,YANG Fu-Hua,WANG Liang-Chen,ZENG Yi-Ping,
来源：中国物理快报（英文版） 年份：2006
AlGaAs/InGaAs high electron mobility transistors (HEMTs) and AlAs/GaAs resonant tunnelling diodes (RTDs) are integrated on GaAs substrates. Molecular beam epita...
[期刊论文] 作者：MA Long,HUANG Ying-Long,ZHANG Yang,WANG Liang-Chen,YANG Fu-Hua,ZENG Yi-Ping,
来源：中国物理快报（英文版） 年份：2006
We report a resonant tunnelling diode (RTD) small signal equiwlent circuit model consisting of quantum capacitance and quantum inductance. The model is verified...
[期刊论文] 作者：XU Xiao-Na,WANG Xiao-Dong,LI Yue-Qiang,CHEN Yan-Ling,JI An,ZENG Yi-Ping,YANG Fu-Hua,
来源：中国物理快报（英文版） 年份：2012
Double-peak N-shaped negative differential resistance (NDR) with a high peak-to-valley ratio is observed in the output characteristics of a GaAs-based modulatio...
[期刊论文] 作者：LI Di,JIA Li-Fang,FAN Zhong-Chao,CHENG Zhe,WANG Xiao-Dong,YANG Fu-Hua,HE Zhi,
来源：中国物理快报（英文版） 年份：2015
...
,Nanoelectronic devices--resonant tunnelling diodes grown on InP substrates by molecular beam epitax
[期刊论文] 作者：Zhang Yang,Zeng Yi-Ping,Ma Long,Wang Bao-Qiang,Zhu Zhan-Ping,Wang Liang-Chen,Yang Fu-Hua,
来源：中国物理（英文版） 年份：2006
This paper reports that InAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current...
[期刊论文] 作者：Dou Xiu-Ming,Sun Bao-Quan,Huang She-Song,Ni Hai-Qiao,Niu Zhi-Chuan,Yang Fu-Hua,Jia Rui,
来源：中国物理B（英文版） 年份：2009
This paper studies the size dependence of biexciton binding energy in single quantum dots (QDs) by using atomic force microscopy and micro-photoluminescence mea...
[期刊论文] 作者：Wang Zhang,Wei-Hua Han,Xiao-Song Zhao,Qi-Feng Lv,Xiang-Hai Ji,Tao Yang,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2017
High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate.Hexagonal InAs nanowires are uniformly grown...
,Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosec
[期刊论文] 作者：Liu-Hong Ma,Wei-Hua Han,Hao Wang,Qi-feng Lyu,Wang Zhang,Xiang Yang,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2016
...
[期刊论文] 作者：ZHANG Hao,ZHENG Hou-Zhi,ZHANG Ji-Dong,XU Ping,TAN Ping-Heng,YANG Fu-Hua,ZENG Yi-Ping,
来源：中国物理快报（英文版） 年份：2004
We report the fabrication and the measurement of microcavities whose optical eigenmodes were discrete and were well predicted by using the model of the photonic...
[期刊论文] 作者：CHANG Yong-Qin,YU Da-Peng,LI Guo-Hua,FANG Zai-Li,ZHANG Ye,CHEN Yao-Feng,YANG FU-Hua,
来源：中国物理快报（英文版） 年份：2004
High-density and uniform well-aligned ZnO sub-micron rods are synthesized on the silicon substrate over a large area. The morphology and structure of the ZnO su...
,A Wafer-Level Sn-Rich Au-Sn Bonding Technique and Its Application in Surface Plasmon Resonance Sens
[期刊论文] 作者：MAO Xu,LV Xing-Dong,WEI Wei-Wei,ZHANG Zhe,YANG Jin-Ling,QI Zhi-Mei,YANG Fu-Hua,
来源：中国物理快报（英文版） 年份：2014
Sn-rich Au-Sn solder bonding is systematically investigated.High shear strength (64 MPa) and good hermeticity (a leak rate lower than 1 × 10-7 torr.l/s) are ob...
[期刊论文] 作者：Xu Rui,Wang Xiao-Dong,Liu Wen,Xu Xiao-Na,Li Yue-Qiang,Ji An,Yang Fu-Hua,Li Jin-Min,
来源：中国物理B（英文版） 年份：2012
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