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[期刊论文] 作者：Kun Tang,Shu-Lin Gu,Jian-Dong Ye,Shun-Ming Zhu,Rong Zhang,You-Dou Zheng,
来源：中国物理B（英文版） 年份：2017
Zinc oxide (ZnO) is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ul...
,Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviol
[期刊论文] 作者：Lan-Feng Tang,Hai Lu,Fang-Fang Ren,Dong Zhou,Rong Zhang,You-Dou Zheng,Xiao-Ming Huang,
来源：中国物理快报（英文版） 年份：2016
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,High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure as Separate Absorp
[期刊论文] 作者：Yin Tang,Qing Cai,Lian-Hong Yang,Ke-Xiu Dong,Dun-Jun Chen,Hai Lu,Rong Zhang,You-Dou Zheng,
来源：中国物理快报（英文版） 年份：2017
It is well known that Ⅲ-nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electr...
[期刊论文] 作者：Xiao-Fan Mo,Wei-Zong Xu,Hai Lu,Dong Zhou,Fang-Fang Ren,Dun-Jun Chen,Rong Zhang,You-Dou Zheng,
来源：中国物理快报（英文版） 年份：2017
Design,fabrication and characterizations of GaN-based blue micro light emitting diode (LED) arrays are reported.The GaN micro-LED array consists of 320 × 256 p...
[期刊论文] 作者：Yin Tang,Qing Cai,Lian-Hong Yang,Ke-Xiu Dong,Dun-Jun Chen,Hai Lu,Rong Zhang,You-Dou Zheng,
来源：中国物理B（英文版） 年份：2017
To enhance the avalanche ionization,we designed a new separate absorption and multiplication AlGaN solarblind avalanche photodiode (APD) by using a high/low-Al-...
[期刊论文] 作者：Lin-Lin Su,Dong Zhou,Qing Liu,Fang-Fang Ren,Dun-Jun Chen,Rong Zhang,You-Dou Zheng,Hai Lu,
来源：中国物理快报（英文版） 年份：2020
We fabricated 4H-SiC ultraviolet avalanche photodiode (APD) arrays and systematically investigated the effect of threading dislocations on electrical and single...
,Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped Ga
[期刊论文] 作者：Mei Ge,Qing Cai,Bao-Hua Zhang,Dun-Jun Chen,Li-Qun Hu,Jun-Jun Xue,Hai Lu,Rong Zhang,You-Dou Zheng,
来源：中国物理B（英文版） 年份：2019
We investigate the negative transconductance effect in p-GaN gate AlGaN/GaN high-electron-mobility transistor (HEMT) associated with traps in the unintentionall...
,Segregations and desorptions of Ge atoms in nanocomposite Si1-xGex films during high-temperature an
[期刊论文] 作者：Yu Wang,Meng Yang,Gang Wang,Xiao-Xu Wei,Jun-Zhuan Wang,Yun Li,Ze-Wen Zou,You-Dou Zheng,Yi Shi,
来源：中国物理B（英文版） 年份：2017
Nanocomposite Sil-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD).The segregations and desorp...
[期刊论文] 作者：Shan Ding,Yue-Wen Li,Xiang-Qian Xiu,Xue-Mei Hua,Zi-Li Xie,Tao Tao,Peng Chen,Bin Liu,Rong Zhang,You-Dou Zheng,
来源：中国物理B（英文版） 年份：2020
The GaN thick films have been grown on porous GaN template and planar metal-organic chemical vapor deposition (MOCVD)-GaN template by halide vapor phase epitaxy...
[期刊论文] 作者：Ze-Ning XIONG,Xiang-Qian XIU,Yue-Wen LI,Xue-Mei HUA,Zi-Li XIE,Peng CHEN,Bin LIU,Ping HAN,Rong ZHANG,You-Dou ZHENG,
来源：中国物理快报（英文版） 年份：2018
Two-inch Ga2O3 films with (201)-orientation are grown on c-sapphire at 850-1050℃ by hydride vapor phase epitaxy.High-resolution x-ray diffraction shows that pu...
[期刊论文] 作者：Yue-Wen Li,Xiang-Qian Xiu,Li-Ying Zhang,Xue-Mei Hua,Zi-Li Xie,Tao Tao,Bin Liu,Peng Chen,Rong Zhang,You-Dou Zheng,
来源：中国物理B（英文版） 年份：2019
In this work, we prepared the b-Ga2O3@GaN nanowires (NWs) by oxidizing GaN NWs. High-quality hexagonal wurtzite GaN NWs were achieved and the conversion from Ga...
,Structural characterization of Al0.55Ga0.45N epitaxial layer determined by high resolution x-ray di
[期刊论文] 作者：Liu,Shi-Ying Zhang,Tao Tao,Zi-Li Xie,Xiang-Qian Xiu,Dun-Jun Chen,Peng Chen,Ping Han,Rong Zhang,You-Dou Zheng,
来源：中国物理B（英文版） 年份：2017
Structural characteristics of Al0.55Ga0.45N epilayer were investigated by high resolution x-ray diffraction (HRXRD) and transmission electron microscopy (TEM);t...
[期刊论文] 作者：Meng-Han Liu,Peng Chen,Zi-Li Xie,Xiang-Qian Xiu,Dun-Jun Chen,Bin Liu,Ping Han,Yi Shi,Rong Zhang,You-Dou Zheng,
来源：中国物理快报（英文版） 年份：2020
Square microdisks with round coers are fabricated using a standard GaN-based blue LED on Si substrates.Whispering gallery-like modes in the square microdisks ar...
[期刊论文] 作者：,Xiang-Qian Xiu,Zhi-Tai Jia,Duo Liu,Xue-Mei Hua,Zi-Li Xie,Tao Tao,Peng Chen,Bin Liu,Rong Zhang,You-Dou Zheng,
来源：中国物理B（英文版） 年份：2019
Single-crystal GaN layers have been obtained by nitridingβ-Ga2O3 films in NH3 atmosphere.The effect of the temperature and time on the nitridation and conversi...
[期刊论文] 作者：Si-Qi Li,Dong-Qi Zhang,Tao Tao,Qing-Jun Xu,Zi-Li Xie,Jian-Dong Ye,Dun-Jun Chen,Bin Liu,Ke Wang,You-Dou Zheng,
来源：中国物理B（英文版） 年份：2022
A systematic investigation on PA-MBE grown GaN with low growth rates (less than 0.2 μm/h) has been conducted in a wide growth temperature range,in order to guide future growth of sophisticated fine structures for quantum device application......
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