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,Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect
[期刊论文] 作者：Peng Cui,Zhao-Jun Lin,Chen Fu,Yan Liu,Yuan-Jie Lv,
来源：中国物理B（英文版） 年份：2017
AlGaN/GaN heterostructure field-effect transistors (HFETs) with different floating gate lengths and floating gates annealed at different temperatures,are fabric...
[期刊论文] 作者：Yuan-Gang Wang,Zhi-Hong Feng,Yuan-Jie Lv,Xin Tan,Shao-Bo Dun,Yu-Long Fang,Shu-Jun Cai,
来源：中国物理B（英文版） 年份：2016
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,Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effec
[期刊论文] 作者：Yan Liu,Zhao-Jun Lin,Yuan-Jie Lv,Peng Cui,Chen Fu,Ruilong Han,Yu Huo,Ming Yang,
来源：中国物理B（英文版） 年份：2017
The parasitic source resistance (Rs) of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) is studied in the temperature range 300-500 K.By using th...
Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma tre
[期刊论文] 作者：Xing-Ye Zhou,Xin Tan,Yuan-Jie Lv,Guo-Dong Gu,Zhi-Rong Zhang,Yan-Min Guo,Zhi-Hong Feng,Shu-Jun Cai,
来源：中国物理B（英文版） 年份：2021
AlGaN/GaN high-electron-mobility transistors(HEMTs)with postpassivation plasma treatment are demonstrated and investigated for the first time.The results show t...
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