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[期刊论文] 作者：Shan Ding,Yue-Wen Li,Xiang-Qian Xiu,Xue-Mei Hua,Zi-Li Xie,Tao Tao,Peng Chen,Bin Liu,Rong Zhang,You-Dou,
来源：中国物理B（英文版） 年份：2020
The GaN thick films have been grown on porous GaN template and planar metal-organic chemical vapor deposition (MOCVD)-GaN template by halide vapor phase epitaxy...
[期刊论文] 作者：Ze-Ning XIONG,Xiang-Qian XIU,Yue-Wen LI,Xue-Mei HUA,Zi-Li XIE,Peng CHEN,Bin LIU,Ping HAN,Rong ZHANG,You-Dou,
来源：中国物理快报（英文版） 年份：2018
Two-inch Ga2O3 films with (201)-orientation are grown on c-sapphire at 850-1050℃ by hydride vapor phase epitaxy.High-resolution x-ray diffraction shows that pu...
[期刊论文] 作者：Shuang Wang,Yue-Wen Li,Xiang-Qian Xiu,Li-Ying Zhang,Xue-Mei Hua,Zi-Li Xie,Tao Tao,Bin Liu,Peng Chen,Rong,
来源：中国物理B（英文版） 年份：2019
In this work, we prepared the b-Ga2O3@GaN nanowires (NWs) by oxidizing GaN NWs. High-quality hexagonal wurtzite GaN NWs were achieved and the conversion from Ga...
[期刊论文] 作者：Fei Cheng,Yue-Wen Li,Hong Zhao,Xiang-Qian Xiu,Zhi-Tai Jia,Duo Liu,Xue-Mei Hua,Zi-Li Xie,Tao Tao,Peng,
来源：中国物理B（英文版） 年份：2019
Single-crystal GaN layers have been obtained by nitridingβ-Ga2O3 films in NH3 atmosphere.The effect of the temperature and time on the nitridation and conversi...
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