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[期刊论文] 作者:Bing Bai,Hong Wang,Yan Li,Yunxia Hao,Bo Zhang,Boping Wang,Zihang Wang,Hongqi Yang,Qihang Gao,Chao Lü,, 来源:中国物理B(英文版) 年份:2019
We present a new charge trapping memory (CTM) device with the Au/Ga2O3/SiO2/Si structure,which is fabricated by using the magnetron sputtering,high-temperature...
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