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The importance of point defects in semiconductor and function materials has been studied in detail.but effective means f......
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Temperature dependence of the hyperfine field of Fe nonocrystalline in SiO2 matrix prepared by using an ion implantation......
Using conversion electron Moessbauer spectroscopy(CEMS) and slow positron beam,the chemical state of 57Fe(100keV,3×......
Doses of 1×10^16,and 2×10^16cmand 1×10^16,2×10^16,3×10^16and 3.6×10^16cm^-2 for iron and c......
F^2+ beam with 3MeV is used to irradiate thin biological samples(onion inner suface membrane and kidney bean coat)in the......
Penetration depth and concentration distribution for implanted heavy ions with low energies in plant
The penetration depth and concentration distribution of implanted ions have beenstudied for low energy heavy ions implan......
Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion impantation......
