MIS-HEMTs相关论文
在蓝宝石衬底上制备了栅长Lg为0.25μm的增强型Al_2O_3/AlGaN/GaN MIS-HEMTs,采用刻蚀凹栅与ALD（原子层淀积）Al_2O_3介质层的方法研......
Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semico
AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) on a silicon substrate were fab......
