MnxGe1-x相关论文
,Oscillation of coercivity between positive and negative in MnxGe1-x∶H ferromagnetic semiconductor f
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利用离子注入方法,以离子能量为100keV,剂量为3×1016cm-2,室温下往n型Ge(111)单晶衬底注入Mn+离子,注入后的样品分别在400和6......