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,F4-TCNQ concentration dependence of the current-voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ
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Comparative study of various methods for extraction of multi-quantum wells Schottky diode parameters
In this work,forward current voltage characteristics for multi-quantum wells Al0.33Ga0.67As Schottky diode were measured......
When a metal makes intimate contact with a semiconductor material, a Schottky barrier may be created. The Schottky conta......
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Comparative study of various methods for extraction of multi-quantum wells Schottky diode parameters
In this work,forward current voltage characteristics for multi-quantum wells Al_(0.33)Ga_(0.67)As Schottky diode were me......
