【摘 要】
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Over the past decades,many works on GaN-based materials and light-emitting diodes have been reported.High-performance LEDs based on GaN micro structures were also realized by selective area growth tec
【机 构】
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School of Physics and Engineering,Sun Yat-sen University,Guangzhou 510275,China
【出 处】
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第一届全国宽禁带半导体学术及应用技术会议
论文部分内容阅读
Over the past decades,many works on GaN-based materials and light-emitting diodes have been reported.High-performance LEDs based on GaN micro structures were also realized by selective area growth technology [1,2].These LEDs are consisting of multiple three dimensional (3D) micro-scale LEDs integrating in one macro-size LED chip.Different from these kinds of LEDs,we present an electrically operated LED in the shape of a single 3D micro-pyramid [3,4].
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