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Type Ⅱ superlattices(SLs) short period InAs(4ML)/GaSb(8ML) were grown by molecular-beam epitaxy on lattice-mismatched GaAs substrates and on GaSb substrates.A smooth GaSb epilayer was formed on GaAs substrates by inserting mulit-buffer layers including an interfacial misfit mode AlSb quantum dot layer and AlSb/GaSb superlattices smooth layer.SLs grown on GaAs substrates(GaAs-based SLs) showed well-resolved satellite peaks in XRD.GaSb-based SLs with better structural quality and smoother surface showed strong photoluminescence at 2.55μm with a full width at half maximum(FWHM) of 20 meV,narrower than 31 meV of GaAs-based SLs.Inferior optical absorption of GaAs-based SL was observed in the range of 2-3μm. Photoresponse of GaSb-based SLs showed the cut-off wavelength at 2.6μm.
Type II superlattices (SLs) short period InAs (4ML) / GaSb (8ML) were grown by molecular-beam epitaxy on lattice-mismatched GaAs substrates and on GaSb substrates. A smooth GaSb epilayer was formed on GaAs substrates by inserting mulit-buffer layers including an interfacial misfit mode AlSb quantum dot layer and AlSb / GaSb superlattices smooth layer. SLN grown on GaAs substrates (GaAs-based SLs) showed well-resolved satellite peaks in XRD. GaSb-based SLs with better structural quality and smoother surface showed strong photoluminescence at 2.55 μm with a full width at half maximum (FWHM) of 20 meV, narrower than 31 meV of GaAs-based SLs.Inferior optical absorption of GaAs-based SL was observed in the range of 2-3 μm. Photoresponse of GaSb- based SLs showed the cut-off wavelength at 2.6 μm.