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结合等离子体处理制备黑硅技术,研究了一种可用于非色散红外吸收光谱(non-dispersive infra-red,NDIR)气体传感器的微机电(micro-electro-mechanical systems,MEMS)红外光源。相较于其他MEMS红外光源,该光源以新型纳米黑硅材料作为辐射层,黑硅的近黑体特性使光源在3~5μm波段发射率可达到98%以上。光源采用四梁固支悬浮薄膜结构,可有效减小辐射区向硅基底的热传导;采用深反应离子刻蚀(DRIE)进行背面释放,有效减小了器件的尺寸。经测试,该光源的光谱辐射特性和调制特性均能满足NDIR气体传感器的要求,且简单的制备工艺使该光源易于实现大规模重复性制造,利于实现产业化推广。
Combining with plasma treatment to prepare black silicon, a micro-electro-mechanical systems (MEMS) infrared light source which can be used in non-dispersive infra-red (NDIR) gas sensors was studied. Compared with other MEMS infrared light sources, the light source uses a novel nano-black silicon material as a radiation layer, and black silicon near-black body characteristics make the light source emit emissivity of more than 98% in the wavelength band of 3 to 5 μm. The light beam adopts a four-beam solid-floating film structure, which can effectively reduce the heat conduction from the radiation area to the silicon substrate. The backside release by the deep reactive ion etching (DRIE) effectively reduces the size of the device. After testing, the spectral radiation characteristics and modulation characteristics of the light source can meet the requirements of the NDIR gas sensor, and a simple preparation process makes the light source easy to achieve large-scale reproducible manufacturing, which is conducive to the promotion of industrialization.