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本文研究了两步三氯乙烯薄栅(～400)氧化工艺,作为制备符合HMOS-Ⅱ工艺所要求的400优质薄栅氧化层的一种新方法。其主要特点是:低温、低浓度三氯乙烯(TCE)的生长氧化,产生一个低缺陷密度的氧化层,然后再在O_2、N_2、TCE混合气氛中进行处理(分为高温处理和原温处理两种),这就改善了原有氧化层的结构完整性,提高了钝化能力。对不同的工艺条件进行了研究,结果表明两步三氯乙烯薄栅氧化工艺可形成高质量的薄氧化层。氧化层厚度控制在400±20范围,表面态密度≤1×10~(11)个/cm~2,平均击穿电场E≥9.5MV/cm,低场击穿有明显改善。氧化层钝化效应与第二步处理温度有关,高温处理钝化效应显著。
In this paper, a two-step trichlorethylene thin gate (~ 400) oxidation process has been studied as a new method for preparing 400 high quality thin gate oxide that meets the requirements of the HMOS-II process. Its main features are: low temperature, low concentration trichlorethylene (TCE) growth and oxidation, resulting in a low defect density oxide layer, and then in O_2, N_2, TCE mixed atmosphere (divided into high temperature treatment and the original temperature treatment Two), which improves the structural integrity of the original oxide layer, improve the passivation ability. The different process conditions were studied, the results show that two-step trichlorethylene thin gate oxidation process can form high-quality thin oxide layer. The thickness of oxide layer is controlled in the range of 400 ± 20, the surface density of state is less than 1 × 10 ~ (11) / cm ~ 2, and the average breakdown electric field is E≥9.5MV / cm. The passivation effect of oxide layer is related to the second-step treatment temperature, and the passivation effect of high-temperature treatment is remarkable.