针对激光二极管抽运的以Nd:YVO_4板条晶体为增益介质的激光器件,基于有限容积法数值分析各向异性介质的热传导方程,给出了Nd:YVO_4晶体板条结构的热分布数值模型,并分别模拟仿真了808nm半导体激光器双端端面抽运,大面均匀抽运,大面周期分布抽运三种抽运结构,得到了Nd:YVO_4板条晶体在这三种抽运结构下的非稳态时不同时刻的温度曲线和稳态时的三维温度分布切面图. Aiming at the laser diode laser pumped Nd: YVO 4 slab crystal as the gain medium laser device, based on the finite volume method numerical analysis of anisotropic medium heat conduction equation, gives the Nd: YVO 4 crystal lath structure of the heat distribution numerical model, Three kinds of pumping structures of 808nm semiconductor laser, such as double end face pumped, large face pumped and large face periodic pumped, were respectively simulated. The results show that Nd: YVO_4 slab crystal is Steady state at different times when the temperature curve and steady-state three-dimensional temperature distribution section.