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采用两步激光晶化方法制备了多晶硅薄膜 ,其晶粒尺寸为 1.1μm,比用传统单步晶化制备的薄膜晶粒尺寸大 ,表明该方法对扩大晶粒尺寸很有效。拉曼光谱分析表明 0 .30 J/ cm2晶化的薄膜结晶程度已很高
A two-step laser crystallization method was used to fabricate a polycrystalline silicon thin film with a grain size of 1.1μm, which is larger than that of a single-step crystallized film. It shows that this method is effective for increasing the grain size. Raman spectroscopy showed that the crystalline degree of crystallization at 0.30 J / cm2 was already high