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分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂质系数，给出了表面浓度与工艺参数之间的模拟关系式，以峰值浓度为强反型条件计算了开启电压。文章还给出了开启电压、氧化条件、不同注入组合之间的关系式
Considering the depth and the thickness of the channel region into the impurities in the oxide diffusion process on the surface concentration contribution. The diffusion enhancement coefficient, oxidation reduction coefficient and effective impurity coefficient of diffusion coefficient were extracted separately for the diffusion of implanted impurities. The relationship between the surface concentration and the process parameters was given. The peak concentration was calculated as strong inversion Turn on the voltage. The article also gives the relationship between turn-on voltage, oxidation condition and different injection combinations