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光助电化学刻蚀技术是目前获取高深宽比微纳结构的重要方法之一。由于其制作成本低、三维结构形貌可光控实现而受到重视。从实际应用出发,对Lehmann光照模型和电流密度经验公式进行了修正,并从理论和实验上研究了光照对电化学刻蚀过程和结构形貌的影响。着重分析了光照红移带来的正面效果和负面影响。理论分析和实验均证明,采用提出的修正模型,可以方便地实现对厚度为400～500μm的Si片深刻蚀,并可在刻蚀深度为150μm的情况下,实现壁厚在0.2μm到数微米的控制,Si片刻蚀面的直径可达5英寸(125 mm)或更大。为该技术的实现提供了修正的理论模型和实用化的工艺技术。
Photo-assisted chemical etching is one of the important methods for obtaining high aspect ratio micro / nano structure. Due to its low production costs, three-dimensional structure can be light-controlled realization of the importance of attention. Based on the practical application, the empirical formula of Lehmann illumination model and current density was modified, and the influence of illumination on electrochemical etching process and structure morphology was studied theoretically and experimentally. Emphasis is placed on the positive and negative effects of light redshifts. Both theoretical analysis and experiment prove that the modified model can be used to realize the deep etching of the Si wafer with the thickness of 400-500μm and the thickness of the Si film can be 0.2μm to several μm with the etching depth of 150μm Si wafer etched surfaces can be up to 5 inches (125 mm) or larger in diameter. For the realization of the technology provides a revised theoretical model and practical technology.