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提出了一种利用单电子晶体管与金属氧化物半导体的混合结构(SET-MOS)实现离散混沌系统的方法.研究了两个并联结构的单电子晶体管在电流源偏置下的传输特性,并建立其相应的S形分段线性函数模型.基于该模型实现了一维离散映射系统,分析了它的动力学特性,包括一维映射过程、分岔图和Lyapunov指数等.最后利用SET-MOS混合电路设计出该离散混沌系统的电子电路,验证了理论分析和实现方法的正确性.研究结果表明,该方法不仅可行,而且物理实现结构简单,利于集成.
A method to realize the discrete chaotic system by using single-transistor and metal-oxide semiconductor hybrid structure (SET-MOS) is presented. The transfer characteristics of two parallel electron-emitter transistors under current source bias are studied and established And its corresponding S-shaped piecewise linear function model. Based on this model, a one-dimensional discrete mapping system is realized and its dynamics characteristics are analyzed, including one-dimensional mapping process, bifurcation diagram and Lyapunov exponent, etc. Finally, The circuit design of the discrete chaotic system of electronic circuits, verify the theoretical analysis and the correctness of the method.The results show that this method is not only feasible, but also to achieve the physical structure is simple and conducive to integration.