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近年来,图形化蓝宝石衬底(PSS)作为GaN基LED外延衬底材料被广泛应用。通过干法刻蚀和湿法腐蚀制备了不同规格和形状的蓝宝石衬底图形,并进行外延生长、芯片制备和封装验证,采用扫描电子显微镜(SEM)和3D轮廓仪进行形貌表征,研究了不同规格和形状的衬底图形对LED芯片出光性能影响,并与外购锥形衬底(PSSZ2)进行对比。结果表明,在20 m A工作电流下,PSSZ2的LED光通量为8.33 lm。采用类三角锥和盾形衬底的LED光通量分别为7.83 lm和7.67 lm,分别比PSSZ2衬底低6.00%和7.92%。对锥形形貌进行优化,采用高1.69μm、直径2.62μm、间距0.42μm的锥形衬底(PSSZ3)的LED光通量为8.67 lm,比PSSZ2衬底高4.08%,优化的PSSZ3能有效地提高LED出光性能。
In recent years, the patterned sapphire substrate (PSS) is widely used as a GaN-based LED epitaxial substrate material. The sapphire substrates with different sizes and shapes were prepared by dry etching and wet etching. The samples were epitaxially grown, fabricated and encapsulated. Scanning electron microscopy (SEM) and 3D profilometry were used to characterize the morphology. Different specifications and shapes of the substrate graphics on the LED chip light performance, and outsourcing conical substrate (PSSZ2) for comparison. The results show that the LED luminous flux of PSSZ2 is 8.33 lm at a current of 20 mA. The LED luminous fluxes using the pyramid-like pyramids and shield-shaped substrates were 7.83 lm and 7.67 lm, respectively, 6.00% and 7.92% lower than the PSSZ2 substrate respectively. Optimized the taper morphology, the LED luminous flux of 8.67 lm, which is 4.08% higher than that of PSSZ2 substrate, using PSSZ3 with 1.69μm in diameter, 2.62μm in diameter and 0.42μm in pitch, effectively improves PSSZ3 LED light performance.