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在通讯或雷达系统的设计应用中,常常以硅功率晶体管作为接收微波频率的主要器件,而且为了能够更好的获取微波频率,一般是对晶体管的芯片进行高密度压缩设计,即在最小的集电结面积中安排最长的发射极周长。这种设计方法虽然可以使晶体管芯片的结构得到很大改善,但在工作运行中,却很容易使芯片出现高温现象,极大的影响了输出功率,甚至还可能将器件烧毁。而只有降低工作结温,才能保证硅功率晶体管的正常使用,提高其可靠性,延长其使用寿命。现主要是通过改进芯片设计,以双层金属电极替换普通的单层金属电极,以此来改善晶体管的结温,增大微波功率分布的均匀性。
In communication or radar system design and application, the silicon power transistor is often used as the main device to receive the microwave frequency. In order to obtain better microwave frequency, the transistor chip is usually designed with high density, that is, in the minimum set Arrange the longest emitter circumference in the electrical junction area. Although this design method can greatly improve the structure of the transistor chip, but in the operation, it is easy to make the chip high temperature phenomenon, a great impact on the output power, and may even burn the device. Only by lowering the operating junction temperature can the normal use of silicon power transistors be guaranteed, their reliability improved, and their useful life extended. Now mainly through the improvement of chip design, double-layer metal electrodes to replace the ordinary single-layer metal electrodes, in order to improve the junction temperature of the transistor, increasing the uniformity of microwave power distribution.