本文提出一种能在毫米波很好工作的三端半导体器件—异质结势垒控制飞的电子晶体管(简称势垒飞越晶体管)。器件的基本结构相似于“热电子晶体管”,其性能兼有通常场效应晶体管和双极晶体管的优点,频率性能预期比一般场效应晶体管要高一个数且级。 In this paper, we propose a three-terminal semiconductor device that works well with millimeter-wave-heterojunction barrier-controlled electronic transistors (referred to as barrier-over-transistors). The basic structure of the device is similar to the “hot electron transistor”, the performance of both the usual field effect transistor and bipolar transistor advantages, the frequency performance is expected to be higher than the average number of field-effect transistors and a few levels.