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通过红外热相分析发现,在直流工作条件下,双层金属电极硅功率晶体管芯片比单层金属电极的结温低10℃以上;在微波工作条件下,双层金属电极芯片的结温比单层金属电极的低43.7℃。试验结果表明,双层金属电极能够改善硅微波功率晶体管芯片内微波输入功率和结温分布的均匀性。
By infrared thermal phase analysis, it is found that the junction temperature of the double-layer metal-electrode silicon power transistor chip is lower than that of the single-layer metal electrode by more than 10 ° C under DC working condition. Under microwave operating conditions, the junction temperature of the double- The lower metal electrode 43.7 ℃. The experimental results show that the double-layer metal electrode can improve the uniformity of microwave input power and junction temperature distribution in the silicon microwave power transistor chip.