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对比观察了不同工艺条件下金刚石线锯和砂浆线锯切割晶体Si片的表面微观形貌;分析了其切割机理及去除模式;对比分析了三种不同化学方法钝化Si片的效果和稳定性;采用逐层腐蚀去除Si片的损伤层,使用碘酒对其进行化学钝化,然后测试其少子寿命,分析Si片少子寿命随去除深度的变化趋势,根据Si片少子寿命达到最大值时的腐蚀深度,测试确定Si片的损伤层厚度。经实验测得,砂浆线锯切割Si片的损伤层厚度为10μm左右,金刚石线锯切割Si片的损伤层厚度为6μm左右。结果表明,相比于砂浆线锯切割Si片,金刚石线锯切割Si片造成的表面损伤层更浅,表面的机械损伤也更小。
The surface morphology of the Si wafer by diamond wire saw and mortar wire sawing was observed and compared under different conditions. The cutting mechanism and the removal mode were analyzed. The effects and the stability of Si passivation by three different chemical methods The damaged layer of Si wafer was removed by layer-by-layer etching. The iodine wine was used to chemically passivate the damaged layer. Then the lifetime of the minority carriers was tested. The change trend of the lifetime of the minority Si with the removal depth was analyzed. Corrosion depth, test to determine the thickness of damage Si layer. The experimental results show that the damaged layer thickness of Si wafer is about 10μm, while that of diamond wire saw is about 6μm. The results show that, compared with the mortar wire saw cutting Si films, diamond wire saw cutting Si damage caused by the surface layer is more shallow, the mechanical surface damage is also smaller.