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利用65 nm互补金属氧化物半导体(CMOS)工艺,设计了一种新的单芯片超材料结构太赫兹吸波器,面积约为0.60 mm×0.65 mm,包含75个吸波单元.吸波单元图案采用CMOS工艺中顶层铜金属,厚度为3.2μm,设计为正八边形和正方形开口谐振环的组合结构;介质层由无掺杂硅玻璃、碳化硅、氮化硅等组成,厚度为9.02μm;介质层背面短线采用CMOS工艺中的第一层金属,厚度为0.2μm.仿真结果表明,该吸波器在0.921 THz、1.181 THz两个频率处达到最大吸收率,分别为97.84%和95.76%.克服了采用砷化镓、薄膜工艺实现的太赫兹吸波器与CMOS工艺兼容问题,有利于在大规模集成电路中实现.
A new single-chip metamaterial THz absorber with a surface area of 0.60 mm × 0.65 mm and 75 absorber elements is designed by using 65 nm CMOS technology. The top layer copper metal in the CMOS process is designed with a thickness of 3.2 μm and a combination of a regular octagon and a square opening resonant ring. The dielectric layer is made of undoped silicon glass, silicon carbide, silicon nitride and the like, and has a thickness of 9.02 μm. The backside of the dielectric layer is made of the first layer of metal in the CMOS process and has a thickness of 0.2 μm. The simulation results show that the absorber achieves the maximum absorption at two frequencies of 0.921 THz and 1.181 THz, which are respectively 97.84% and 95.76%. The invention overcomes the problem that the terahertz wave absorber and the CMOS technology are compatible with the gallium arsenide and the thin film technology, and is beneficial to be implemented in a large-scale integrated circuit.