论文部分内容阅读
GaN基LED的表面电流扩展对于器件的特性起着很重要的作用。制作环状N电极的器件在正向电压、总辐射功率、器件老化等特性方面较普通的电极都有很大的提高。通过一系列的实验对环状N电极和普通电极进行了比较,在外加正向电流为20 mA时,正向电压减小了6%,总辐射功率也略有提高,工作50小时后,总辐射功率相差8%,验证了环状N电极结构有利于器件电流扩展,减少器件串联电阻,减少了焦耳热的产生,提高了LED电光特性和可靠性。
The surface current expansion of GaN-based LEDs plays an important role in the device characteristics. The device making annular N electrode has a great improvement compared with ordinary electrodes in terms of forward voltage, total radiant power and device aging. A series of experiments were carried out to compare the annular N electrode with the normal electrode. When the forward current was 20 mA, the forward voltage was reduced by 6% and the total radiation power was also slightly increased. After 50 hours of operation, The difference of radiation power is 8%. It is verified that the ring N electrode structure is conducive to the device current expansion, reducing the series resistance of the device, reducing the generation of Joule heat, and improving the electro-optic characteristics and reliability of the LED.