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采用RF PECVD方法,在P a SiC:H薄膜沉积技术基础上,通过逐步减小碳、硼的掺杂浓度,增大氢稀释率,使材料从非晶态向微晶态转变,在获得本征微晶材料之后,再逐步增大硼掺杂浓度,得到P型微晶硅薄膜材料(暗电导率为5.22×10-3S/cm,光学带隙大于2.0eV)。在这个过程中可以明显观察到碳、硼抑制材料晶化的作用。
Based on the P a SiC: H thin film deposition technique, the RF PECVD method was used to reduce the doping concentration of carbon and boron, increase the hydrogen dilution rate and make the material transform from amorphous to microcrystalline state. After the microcrystalline material was implanted, the boron doping concentration was gradually increased to obtain a P-type microcrystalline silicon thin film material with a dark conductivity of 5.22 × 10 -3 S / cm and an optical band gap of more than 2.0 eV. In this process, it can be clearly observed that carbon and boron inhibit the crystallization of the material.