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对实验室和小量生产,为获得亚微米分辨率最好的办法是采用远紫外曝光光源,如Cd—He或Hg—Xe真空接触方式进行光刻。其缺点是光源的强度低,同时由于光致抗蚀剂的敏感度差,其曝光时间过长,通常需5～10分钟。 最近卡尔修斯公司采用了新的远紫外光源,即采用准分子激光器(波长为193nm)产生的强光束作为曝光光源(激光物质为氟化氩气体)。其曝光时间缩短到15～30秒钟,采用PMMA光刻胶,分辨率小于0.2微米。 这种激光光源可用于该公司的MJB—3和MA56系列光刻机。
For laboratories and small-scale production, the best way to achieve sub-micron resolution is to use a deep UV exposure light source such as Cd-He or Hg-Xe vacuum contact lithography. The disadvantage is the low intensity of the light source, while the sensitivity of the photoresist is poor, the exposure time is too long, usually 5 to 10 minutes. Recently, KATHMISSU adopted a new far-UV light source, a strong light beam generated by an excimer laser (with a wavelength of 193nm) as an exposure light source (the laser material is argon fluoride gas). The exposure time is shortened to 15 to 30 seconds, the use of PMMA photoresist, resolution of less than 0.2 microns. This laser light source can be used in the company’s MJB-3 and MA56 series lithography machine.