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报道了利用电子束蒸发的Mg/B多层膜作为前驱体,然后退火制备MgB2薄膜的工作.实验中发现,采用翻转膜面的退火处理方式可以有效地避免降温过程中Mg蒸气在薄膜表面形成的颗粒凝结,由此稳定地实现了面积为10mm×10mm,均匀、平整的超导薄膜的制备,Tc达35K,转变宽度为0·8K,在5μm×5μm的区域内薄膜的平均粗糙度小于10nm.为了便于后续器件制作过程中的微加工工艺,研究了膜厚小于1000时薄膜的成相规律,发现当样品厚度减薄后,Tc会有明显降低.通过调整前驱薄膜中的不同分层厚度,仍可实现转变温度达30K以上、厚度约600的MgB2薄膜,在20K时的临界电流密度为2·4×106A/cm2.
Reported the use of electron beam evaporation of Mg / B multilayer film as a precursor, and then annealing the preparation of MgB2 film experiments found in the experiment, the use of flip film annealing process can effectively prevent the formation of Mg vapor in the cooling process on the film surface Thus, a uniform and smooth superconducting thin film having an area of 10 mm × 10 mm was stably produced. The Tc was 35 K and the transition width was 0.8 K. The average roughness of the film in the area of 5 μm × 5 μm was less than 10nm. In order to facilitate the micro-fabrication process of the subsequent devices, the phase-forming law of the films with a film thickness less than 1000 was investigated and it was found that Tc decreased significantly when the thickness of the films was reduced. By adjusting the different layers The thickness of MgB2 film can still be achieved when the transformation temperature is up to 30K and the thickness is about 600. The critical current density at 20K is 2.4 × 106A / cm2.