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以反射式NEAGaN光电阴极充分激活、衰减以及补Cs后的量子效率曲线为依据,针对阴极量子效率的衰减规律和补Cs后的恢复状况,论述了NEAGaN光电阴极量子效率的衰减和恢复机理.经过重新Cs化处理,反射式NEAGaN光电阴极量子效率在240nm到300nm的短波区域恢复到激活后最好状态的94%以上,300nm到375nm的长波区域恢复到88%以上.结合反射式NEAGaN光电阴极衰减前后的表面势垒形状和反射式GaN光电阴极量子效率的计算公式,得到了量子效率曲线的衰减规律以及补Cs后的恢复状况与表面势垒形状改变之间的关系.
Based on the full activation and decay of the reflective NEAGaN photocathode and the quantum efficiency curve after Cs replenishment, the decay and recovery mechanism of the quantum efficiency of NEAGaN photocathode was discussed according to the decay law of the cathode quantum efficiency and the recovery status after Cs replenishment. After re-Cs treatment, the reflectivity of NEAGaN photocathode was restored to more than 94% in the short-wave region from 240nm to 300nm, and the long wavelength region from 300nm to 375nm was restored to more than 88% .Based on the reflection loss of NEAGaN photocathode The front and back surface barrier shape and the quantum efficiency of the reflective GaN photocathode, the decay law of the quantum efficiency curve and the relationship between the recovery state after the Cs replenishment and the surface barrier shape change were obtained.