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光栅结构的设计和制作直接决定了分布反馈(DFB)半导体激光器光电特性的优劣。采用传输矩阵法模拟了不同光栅耦合因子下随机相位对均匀光栅DFB芯片特性的影响,获得了芯片的光电参数分布。通过分析耦合因子对芯片光电参数分布的影响,提高了DFB芯片的成品率。设计并制备了基于Al Ga In As材料体系的脊波导DFB激光器,最终使芯片双峰比例仅为7.7%、成品率达到60%。对合格品在-40~105℃下的P-I特性和在-40~85℃下的光谱进行了测试,结果表明芯片性能优良,芯片远场发散角为25°和21°。芯片的小信号频带响应和眼图测试结果表明芯片完全满足2.5 Gbit/s的应用要求。
The design and fabrication of grating structure directly determines the photoelectric characteristics of distributed feedback (DFB) semiconductor lasers. The transmission matrix method was used to simulate the influence of random phase on the characteristics of uniform grating DFB chip under different grating coupling factors, and the photoelectric parameter distribution of the chip was obtained. By analyzing the influence of the coupling factor on the photoelectric parameter distribution of the chip, the yield of the DFB chip is improved. The ridge-waveguide DFB laser based on Al Ga In As material system was designed and fabricated. Finally, the bimodal ratio of the chip was only 7.7%, yielding 60%. The P-I characteristics of qualified products at -40 ~ 105 ℃ and the spectra at -40 ~ 85 ℃ were tested. The results show that the chip performance is excellent, and the far-field divergence angles of chips are 25 ° and 21 °. Small-signal chip response and eye diagram results show that the chip fully meet the 2.5 Gbit / s application requirements.