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pnp晶体管中由于空穴的迁移率较电子的迁移率低得多,再加上纵向pnp管有比npn管严重得多的基区宽度调变效应,一般情况下,难以使纵向pnp管的性能与npn管的性能相媲美。我们从理论上分析了提高纵向pnp管性能的途径,并设计了一套新的工艺流程。在p型外延材料上研制出了BV_(ceo)≥90V、V_(be)≤0.8V、f_T=900MHz、V_(ces)=0.2V、β=60～150、厄利电压大于150V的纵向pnp晶体管。在P型单晶材料上研制出了BV_(ceo)≥65V、f_T≥560MHz、β=60～150的纵向pnp晶体管。具有这种性能的纵向pnp管目前在国内外还很少见。
Since the mobility of holes in pnp transistors is much lower than the mobility of electrons, coupled with the basal width modulation effect of longitudinal pnp tubes that is much worse than npn tubes, it is generally difficult to make the performance of longitudinal pnp tubes With npn tube performance comparable. We theoretically analyzed ways to improve the performance of vertical pnp tubes, and designed a new set of technological processes. The vertical pnp with BV_ (ceo) ≥90V, V_ (be) ≤0.8V, f_T = 900MHz, V_ (ces) = 0.2V, β = 60 ~ 150 and Elliptic voltage greater than 150V were developed on p- Transistor. On the P-type single crystal material developed BV_ (ceo) ≥ 65V, f_T ≥ 560MHz, β = 60 ~ 150 vertical pnp transistor. Vertical pnp tube with this kind of performance is still rare at home and abroad.