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建立电感耦合等离子体-质谱法(ICP-MS)测定工业硅中痕量B和P的分析方法。采用HF-HNO3混合酸处理样品,对仪器工作参数进行优化,以Rh为校正内标,有效克服了基体效应及多元素分子离子干扰。分析结果表明,方法的检出限为:B为2.0μg.L-1、P为8.5μg.L-1,B和P的加标回收率分别为:97.2%—103.6%、95.2%—102.8%,精密度分别为2.6%、3.5%。方法可准确、快速测定工业硅中痕量元素B和P。
A method for the determination of trace B and P in industrial silicon by inductively coupled plasma-mass spectrometry (ICP-MS) was established. The samples were treated with HF-HNO3 mixed acid, and the working parameters of the instrument were optimized. Rh was used as the internal standard to overcome the matrix effect and multi-element molecular ion interference. The analytical results showed that the detection limits of the method were: B was 2.0μg.L-1, P was 8.5μg.L-1, the recoveries of B and P were 97.2% -103.6%, 95.2% -102.8 %, Respectively, precision of 2.6%, 3.5%. Methods Accurate and rapid determination of trace elements B and P in industrial silicon.