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针对临近空间单粒子效应进行了数值模型仿真和特征尺寸为0.1μm的反相器电路的脉冲注入模拟研究。数值仿真结果表明器件临界电荷随着工作电压的降低而减小,敏感横截面随着临界电荷的降低而逐渐增大。临近空间微电子器件的单粒子翻转概率随敏感横截面增大而上升,但其又随临近空间高度的增加而下降。此外,利用SPICE软件脉冲注入模拟观察到了反相器电路的单粒子翻转现象。所得结论有助于深入研究临近空间的单粒子效应并为器件抗辐射加固提供了理论依据。
The numerical simulation and the simulation of impulse injection of the inverter with characteristic size of 0.1μm are carried out for the near-space single-particle effect. The numerical simulation results show that the critical charge of the device decreases with the decrease of the operating voltage, and the sensitive cross section increases with the decrease of the critical charge. The probability of single-particle inversion of a nearby space microelectronic device increases as the sensitive cross-section increases, but decreases as the height of the adjacent space increases. In addition, single-shot inversion of the inverter circuit was observed using the SPICE software pulse injection simulation. The conclusions are helpful to further study the single-particle effect near the space and provide a theoretical basis for anti-radiation reinforcement of the device.