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Design,fabrication and characterization of a novel two-color detector for ultraviolet and infrared applications are reported.The detector has a simple multilayer structure composed of n-Al_(0.3)Ga_(0.7)N/i-GaN/p-GaN /SiO_2/LaNiO_3/PZT/Pt fabricated on a sapphire substrate.Ultraviolet and infrared properties are measured.For the ultraviolet region,a flat band spectral response is achieved in the 302-363 nm band.The detector displays an unbiased responsivity of 0.064 AAV at 355 nm.The current-voltage curve shows that current at zero bias is -1.57×10~(-12) A.This led to a detectivity of 1.81×10~(11) cm·Hz~(1/2)/W.In the infrared region,the detectivity of the detector is 1.58×10~5cm·Hz~(1/2)/W at 4μm.
Design, fabrication and characterization of a novel two-color detector for ultraviolet and infrared applications are reported. The detector has a simple multilayer structure composed of n-Al_ (0.3) Ga_ (0.7) N / i-GaN / p-GaN / SiO_2 / LaNiO_3 / PZT / Pt fabricated on a sapphire substrate. Ultraviolet and infrared properties are measured. For the ultraviolet region, a flat band spectral response was achieved in the 302-363 nm band. The detector displays an unbiased responsivity of 0.064 AAV at 355 nm. The current-voltage curve shows that current at zero bias is -1.57 × 10 ~ (-12) A. This led to a detectivity of 1.81 × 10 ~ (11) cm · Hz ~ (1/2) / W. In the infrared region, the detectivity of the detector is 1.58 × 10 ~ 5cm · Hz ~ (1/2) / W at 4μm.