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The chemical reaction at solid state between the pressless sintered Si_3N_4 substrate and Ti-de-posited film has been studied by X-ray diffraction analysis.The reaction all depends upon thetemperature.It seems no reaction below 973 K:Ti_2N and Ti_5Si_3 form from 1073 to 1123 K:TiN and Ti_5Si_3 form at 1173 K,TiN and Ti_5Si_4 form at 1273 K;while the titanium film di-minishes completely.The lattice parameter of Si_3N_4 is unchanging thrioughout postannealing.This implies that the Ti atoms never dissolve into the Si_2N_4 lattice.
The chemical reaction at solid state between the pressless sintered Si_3N_4 substrate and Ti-de-posited film has been studied by X-ray diffraction analysis. The reaction all depends upon the temperature. It seems no reaction below 973 K: Ti_2N and Ti_5Si_3 form from 1073 to 1123 K: TiN and Ti_5Si_3 form at 1173 K, TiN and Ti_5Si_4 form at 1273 K; while the titanium film di-minishes completely. The lattice parameter of Si_3N_4 is unchanging thrioughout postannealing. This implies that the Ti atoms never dissolve into the Si_2N_4 lattice.