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介绍了GaAs,InP和GaN等几种重要化合物半导体电子器件的特点、应用和发展前景。回顾了GaAs,InP和GaN材料的材料特性及其器件发展历程与现状。分别讨论了GaAs基HEMT由PHEMT渐变为MHEMT结构和性能的变化,GaAs基HBT在不同电路应用中器件的特性,InP基HEMT与HBT的器件结构及工作特性,GaN基HEMT与HBT的器件特性参数。总体而言,化合物半导体器件与电路在高功率和高频电子器件方面发展较快,GaAs,InP和GaN材料所制得的各种器件电路工作在不同的频率波段,其在相关领域发展潜力巨大。
The characteristics, applications and development prospects of several important compound semiconductor electronic devices, such as GaAs, InP and GaN, are introduced. The material properties of GaAs, InP and GaN materials and the development history and current status of their devices are reviewed. The changes of the structure and performance of GaAs-based HEMTs from PHEMT to MHEMT are discussed respectively. The characteristics of GaAs-based HBTs in different circuit applications, device structures and operating characteristics of InP-based HEMTs and HBTs, device characteristics of GaN-based HEMTs and HBTs . In general, compound semiconductor devices and circuits have developed rapidly in high-power and high-frequency electronic devices. Various device circuits made of GaAs, InP and GaN materials operate in different frequency bands and have great potential in related fields .