应用扫描电镜(SEM)观察经深蚀的铝硅共晶合金试样,研究硅晶体的生长前沿。结果表明:沿〈100〉生长是硅晶体固有的生长方式。共晶硅在变质前后均以固有生长方式生长,未有根本的改变。钠元素的变质作用可能在于改变硅晶体生长环境促使晶体生长速度加快,超过临界生长速度值,迫使共晶硅晶体的形态发生改变。 The scanning electron microscope (SEM) was used to observe the growth front of the silicon crystal by observing the etched aluminum-silicon eutectic alloy sample. The results show that the growth along the <100> is an intrinsic growth mode of silicon. Eutectic silicon in the metamorphic growth both before and after growth, there is no fundamental change. Sodium metamorphism may be due to changes in the growth environment of silicon crystals to promote crystal growth faster than the critical growth rate value, forcing the eutectic silicon crystal morphology changes.