论文部分内容阅读
采用瞬间蒸发技术沉积了厚度为800 nm的P型Bi0.5Sb1.5Te3热电薄膜,并在373 K-573 K进行1小时的真空退火处理。利用X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)和能量散射谱(EDS)分别对薄膜的物相结构、表面形貌以及化学计量比进行表征。研究了退火温度对Bi0.5Sb1.5Te3薄膜的电阻率和Seebeck系数的影响,退火温度从373K增加到473K,Bi0.5Sb1.5Te3薄膜的电阻率和Seebeck系数都随之增加,退火温度从523K增加到573K,薄膜的电阻率和Seebeck系数缓慢下降。当退火温度为473K时,Bi0.5Sb1.5Te3薄膜的电阻率和Seebeck系数分别为2.1 mΩcm和162μV/K,薄膜的热电功率因子最大值为13μW/cmK2。
P-type Bi0.5Sb1.5Te3 thermoelectric thin films with a thickness of 800 nm were deposited by instantaneous evaporation technique and vacuum annealed at 373 K-573 K for 1 hour. The phase structure, surface morphology and stoichiometry of the films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS). The effects of annealing temperature on the resistivity and the Seebeck coefficient of Bi0.5Sb1.5Te3 films were investigated. The annealing temperature increased from 373K to 473K, the resistivity and Seebeck coefficient of Bi0.5Sb1.5Te3 films increased, and the annealing temperature increased from 523K At 573K, the resistivity and Seebeck coefficient of the film slowly decreased. When the annealing temperature is 473K, the resistivity and the Seebeck coefficient of the Bi0.5Sb1.5Te3 film are 2.1 mΩcm and 162μV / K, respectively, and the maximum value of the thermoelectric power factor of the film is 13 μW / cmK2.