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运用化学气相沉积法(CVD),直接以Sn和S为原料分区加热蒸发,通过控制温度分布、气压、载气流量和金属铅纳米颗粒分布等宏观实验条件,成功制备大面积Sn2S3一维纳米结构阵列.扫描电子显微镜(SEM)图片显示:Sn2S3一维纳米结构的横向尺度在100nm左右,长约几个微米.X射线衍射(XRD)谱显示:所制备样品的晶体结构属于正交晶系,沿[002]方向生长.紫外-可见漫反射谱表明Sn2S3一维纳米结构是带隙为2.0eV的直接带隙半导体.讨论了温度分布和金属铅纳米颗粒对Sn2S3一维纳米结构生长的影响,并指出其生长可能遵循气-固(V-S)生长机理.
By means of chemical vapor deposition (CVD), Sn and S were directly heated and evaporated by partition heating. Large-scale Sn2S3 one-dimensional nanostructures were successfully prepared by controlling macro-experimental conditions such as temperature distribution, pressure, carrier gas flow and lead metal nanoparticles distribution The results of X-ray diffraction (XRD) showed that the crystal structure of the prepared sample belongs to the orthorhombic system, Along the direction of [002] growth.UV-visible diffuse reflectance spectroscopy showed Sn2S3 one-dimensional nanostructures is a band gap of 2.0eV direct bandgap semiconductor.Considered the temperature distribution and metallic lead nanoparticles on Sn2S3 one-dimensional nanostructures growth, And pointed out that its growth may follow the gas-solid (VS) growth mechanism.