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用引上法生长了 30 %Yb∶YAG(摩尔分数 ,下同 )晶体 ,研究了晶体的生长工艺参数和退火工艺参数 ;用 940nm的吸收系数表征了Yb3 + 离子在Yb∶YAG晶体中的分布情况 ,结果表明 :Yb3 + 离子在Yb∶YAG晶体中分布均匀 .研究了晶体微片的激光特性 ,用钛宝石激光器泵浦 30 %Yb∶YAG微片 ,获得了 1.0 5 3μm的高效激光输出 .
The crystal growth parameters and annealing parameters were studied by using the Yb: YAG (30% Yb: YAG) crystal. The absorption coefficient of 940 nm was used to characterize the distribution of Yb3 + ions in Yb: YAG crystal The results show that the Yb3 + ions are uniformly distributed in the Yb:YAG crystal.The laser characteristics of the crystal microchip are studied, and a high efficiency laser output of 1.05 3μm is obtained by pumping 30% Yb:YAG microchip with a Ti: sapphire laser.