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目前大量的研究文献已经描述了如何找到使噪声系数最小的低噪声放大器输入网络的最佳品质因数,但是它们往往遗漏了一个重要的参数——源极电感负反馈低噪声放大器中的栅极电感,它的寄生阻抗为低噪声放大器增加了明显的噪声。本研究课题提出了2种优化方法,这2种方法均满足功率匹配并均衡了晶体管所产生的噪声贡献和栅极寄生阻抗所产生的噪声贡献,从而实现了在栅极电感品质因数、功耗、增益限制下的噪声优化。
At present, a large amount of research literature has described how to find the best quality factor of a low-noise amplifier inputting the network with the lowest noise figure, but they often omit one important parameter - the gate inductance in the source inductance negative feedback low-noise amplifier Its parasitic impedance adds significant noise to low-noise amplifiers. Two optimization methods are proposed in this research project, both of which meet the power matching and balance the noise contributions of the transistors and the noise contributions of the gate parasitic impedances, so as to achieve a good performance in the gate inductance quality factor, power consumption , Noise Limiting Gain Optimization.