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在电子储存环中 ,由于被束流势阱俘获的离子会引起束流不稳定性。研究这种不稳定性的产生机制和抑制方法对提高机器的性能有重要理论和现实意义。介绍了用强 -强模型对合肥光源电子储存环中离子俘获不稳定性产生机制进行的模拟研究。模拟结果可用于理解在合肥光源电子储存环上观察到的离子俘获现象。
In electron storage rings, beam instability results from ions trapped by the beam traps. To study the mechanism of production and suppression of this instability has important theoretical and practical significance to improve the performance of the machine. A strong and strong model is introduced to simulate the mechanism of ion trapping instability in Hefei light source electron storage ring. The simulation results can be used to understand the phenomenon of ion trapping observed on the Hefei light source electron storage ring.