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本文描述了一种用高强度会聚光辐射对真空系统中的GaAs晶片进行加热清洁的方法。对光强及目标温度间的关系进行了计算及实验验证。根据升温曲线,可通过调节光源参数来控制目标温度。
This article describes a method of heating clean GaAs wafers in a vacuum system using high intensity converging light radiation. The relationship between light intensity and target temperature was calculated and experimentally verified. According to the temperature rise curve, the target temperature can be controlled by adjusting the light source parameters.