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快速热化学汽相淀积法已用于生长100(?)厚度的Si和Si_(1-x)Ge_x结构。本文讨论了关于生长这种结构的气体变换与温度变换的相关指标。证明了用红外透射进行温度测量时活化温度可控制在600～700C之间。这种生长技术已用于逐县控温45(?)周期的超晶格结构以及接近理想电特性的异质结双极晶体管中。
Rapid thermal chemical vapor deposition has been used to grow 100 (?) Thick Si and Si_ (1-x) Ge_x structures. This article discusses the relevant indicators for the gas transformation and temperature transformation for the growth of this structure. It is proved that the activation temperature can be controlled between 600 ~ 700C with infrared transmission temperature measurement. This growth technique has been used in county-level 45 (?) Cycle superlattice structures and in heterojunction bipolar transistors near ideal electrical characteristics.