Sn O2 :F透明导电薄膜是一种广泛用于显示技术和能量转换技术的重要材料。本文在超声喷雾热解成膜技术基础上 ,对沉积装置进行了改进 ,同时对反应液配方进行了优化 ,在较低温度制备出透明 Sn O2 :F导电薄膜。用 XRD、UV/Vis、SEM、原子力显微镜分析测试方法对沉积薄膜的结构、形貌和光学、电学性质进行了研究。结果表明 ,在 360°C沉积温度下制备的 Sn O2 :F薄膜 ,其方块电阻为 4.7Ω,( 2 0 0 )面择优取向明显 ,薄膜晶粒均匀 ,表面形貌有所改善 ,透明度有所提高。 Sn O2: F transparent conductive film is an important material widely used in display technology and energy conversion technology. In this paper, based on the ultrasonic spray pyrolysis film-forming technology, the deposition device is improved, and the formulation of the reaction solution is optimized. The transparent SnO2: F conductive film is prepared at a lower temperature. The structure, morphology, optical and electrical properties of the deposited films were investigated by XRD, UV / Vis, SEM and atomic force microscopy. The results show that the SnO2: F thin film deposited at 360 ° C has a sheet resistance of 4.7Ω. The preferred orientation of the (200) plane is obvious, the crystal grains are uniform, the surface morphology is improved and the transparency is good improve.