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电阻开关随机存储器是一种有望应用于下一代非易失性存储器的新型存储器件,而ZnO是一种可应用于低电压低能耗电阻开关随机存储器的过渡金属氧化物.我们利用溶液法在40°C低温下制备获得粒径约为7–10 nm的ZnO纳米微粒,然后在优化制备条件下旋涂获得表面平整致密的n型ZnO纳米微粒薄膜.利用紫外-可见光吸收谱推算出ZnO纳米微粒薄膜的光学带隙宽度约为3.34 eV.ITO/ZnO/Al电容器结构的电流-电压曲线具有优良的双极性电阻开关特性:置/复位电压低至±0.2 V;在0.18 V的读取电压下可获得大于100的高/低电阻值比.电场作用下薄膜中ZnO分子发生电化学还原/氧化反应,导致薄膜中富余Zn原子组成的导电细丝周期性导通/截断,从而使得ZnO薄膜表现出电阻开关特性.
Resistance Switch Random Access Memory is a new type of memory device that is expected to be applied to the next generation of nonvolatile memory and ZnO is a transition metal oxide that can be applied to low voltage low power resistive switching random access memory.We use the solution method in 40 ° C at low temperature to obtain ZnO nanoparticles with a diameter of about 7-10 nm, and then spin-coated under optimized conditions to obtain a n-type ZnO nanoparticle film with a fine surface and compactness. ZnO nanoparticles were estimated by UV-Vis absorption spectra The optical bandgap width of the film is approximately 3.34 eV. The current-voltage curve of the ITO / AlO / ZnO capacitor structure has excellent bipolar resistance Switching characteristics: Set / reset voltage down to ± 0.2 V; read voltage at 0.18 V Under the high / low resistance ratio greater than 100. Under the action of an electric field, the ZnO molecules undergo electrochemical reduction / oxidation reaction in the film, resulting in periodic conduction / interruption of the conductive filaments composed of Zn atoms in the film, so that the ZnO thin film Showing resistance switching characteristics.